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| @vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 FEATURES TRANSISTOR (NPN) SOT-23 1. BASE Power dissipation PCM: 0.3 W (Tamb=25) 2. EMITTER 3. COLLECTOR TJ, Tstg: -55 to +150 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN 75 40 6 0.1 0.1 0.1 100 50 0.6 1.2 V V 300 TYP MAX UNIT V V V Ic= 10A, IE=0 Ic= 10mA, IB=0 IE=10A, IC=0 VCB=70V, IE=0 VCE=35V, IB=0 VEB= 3V, IC=0 VCE=10V, IC= 150mA VCE=10V, IC= 1mA IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=20V, IC= 20mA 0. 4 Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range 1. 0 2. 4 1. 3 2. 9 1. 9 0. 95 A A A Transition frequency fT f=100MHz 300 MHz DEVICE MARKING: MMBT2222A = 1P Copyright @vic Electronics Corp. Website http://www.avictek.com |
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